Barrier Capability of TaNx Films Deposited by Different Nitrogen Flow Rate Against Cu Diffusion in Cu/TaNx/n+-p Junction Diodes

Type
article
Resource
SOLID-STATE ELECTRONICS.(45):145-.
Date Issued
2001
Author(s)
歐耿良
Yang WL; Wu WF; Liu DG; Wu CC; Ou KL;
Subjects
生醫材料暨組織工程研究所
期刊論文
URI

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