Barrier Capability of TaNx Films Deposited by Different Nitrogen Flow Rate Against Cu Diffusion in Cu/TaNx/n+-p Junction Diodes

歐耿良Yang WL; Wu WF; Liu DG; Wu CC; Ou KL;2026-05-222026-05-222001https://203.71.86.71/handle/123456789/28212en-US生醫材料暨組織工程研究所期刊論文Barrier Capability of TaNx Films Deposited by Different Nitrogen Flow Rate Against Cu Diffusion in Cu/TaNx/n+-p Junction Diodesarticle